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MAX16838
Integrated, 2-Channel, High-Brightness LED Driver
with High-Voltage Boost and SEPIC Controller
ABSOLUTE MAXIMUM RATINGS
IN, OUT_, DRAIN to SGND ...................................-0.3V to +45V
EN to SGND ...............................................-0.3V to (V IN + 0.3V)
PGND to SGND ....................................................-0.3V to +0.3V
LEDGND to SGND ...............................................-0.3V to +0.3V
DRV to PGND .......... -0.3V to the lower of (V IN + 0.3V) and +6V
GATE to PGND ........................................................-0.3V to +6V
NDRV to PGND .......................................-0.3V to (V DRV + 0.3V)
V CC , FLT , DIM, CS, OV, CFB, to SGND .................-0.3V to +6V
RT, COMP, ISET to SGND.........................-0.3V to (V CC + 0.3V)
DRAIN and CS Continuous Current .................................. Q 2.5A
OUT_ Continuous Current ................................................175mA
V DRV Short-Circuit Duration .....................................Continuous
Continuous Power Dissipation (T A = +70 N C)
20-Pin TQFN (derate 25.6mW/ N C above +70 N C) ............2051mW
20-Pin TSSOP (derate 26.5mW/ N C above +70 N C) ......2122mW
Operating Temperature Range ........................ -40 N C to +125 N C
Junction Temperature .....................................................+150 N C
Storage Temperature Range............................ -65 N C to +150 N C
Soldering Temperature (reflow) ......................................+260 N C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
20 TQFN
Juction-to-Ambient Thermal Resistance ( B JA ) .......... +39 N C/W
Junction-to-Case Thermal Resistance ( B JC )............... +6 N C/W
20 TSSOP
Junction-to-Ambient Thermal Resistance ( B JA ) ..... +37.7 N C/W
Junction-to-Case Thermal Resistance ( B JC ) ............... +2 N C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial .
ELECTRICAL CHARACTERISTICS
(V IN = V EN = 12V, R RT = 12.2k I , R ISET = 15k I , C VCC = 1 F F, V CC = V DRV = V CFB , DRAIN, COMP, OUT_, FLT = unconnected, V OV
= V CS = V LEDGND = V DIM = V PGND = V SGND = 0V, V GATE = V NDRV , T A = T J = -40 N C to +125 N C, unless otherwise noted. Typical
values are at T A = 25 N C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Input Voltage Range
Input Voltage Range
Quiescent Supply Current
Standby Supply Current
V IN
V IN
I Q
I SH
Internal LDO on
V IN = V CC
V DIM = 5V
V EN = SGND (Note 3 )
4.75
4.55
3.1
15.5
40
5.5
5
40
V
V
mA
F A
Undervoltage Lockout
UVLO IN
V IN rising, V DIM = 5V
4
4.3
4.55
V
Undervoltage Lockout Hysteresis
DRV REGULATOR
177
mV
Output Voltage
Dropout Voltage
V DRV
V DO
(V IN - V DRV )
5.75V < V IN < 10V, 0.1mA < I LOAD < 30mA
6.5V < V IN < 40V, 0.1mA < I LOAD < 3mA
V IN = 4.75V, I OUT = 30mA
4.75
5
0.11
5.25
0.5
V
V
Short-Circuit Current Limit
DRV shorted to GND
97
mA
V CC Undervoltage Lockout
Threshold
UVLO VCC
V CC rising
3.4
4.0
4.4
V
V CC (UVLO) Hysteresis
2
123
mV
Maxim Integrated
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